tp0202t vishay siliconix document number: 70208 s-04279?rev. g, 16-jul-01 www.vishay.com 11-1 p-channel 20-v (d-s) mosfet
v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) 1.4 @ v gs = ?10 v ?1.3 to ? 3 v ?0.41 ?20 3.5 @ v gs = ?4.5 v ?1.3 to ? 3 v ?0.27
high-side switching low on-resistance: 0.9 low threshold: ?2.1 v fast switching speed: 18 ns low input capacitance: 55 pf ease in driving switches low offset (error) voltage low-voltage operation high-speed switching easily driven without buffer drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems power supply, converter circuits motor control g to-236 (sot-23) s d top view 2 3 1 marking code: p3 wll p3 = part number code for tp0202t w = week code ll = lot traceability
parameter symbol limit unit drain-source voltage v ds ?20 gate-source voltage v gs 20 v t a = 25 c ?0.41 continuous drain current (t j = 150 c) t a = 70 c i d ?0.26 a pulsed drain current a i dm ?0.75 t a = 25 c 0.35 power dissipation t a = 70 c p d 0.22 w thermal resistance, junction-to-ambient r thja 357 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature. for applications information see an804.
tp0202t vishay siliconix www.vishay.com 11-2 document number: 70208 s-04279 ? rev. g, 16-jul-01
limits parameter symbol test conditions min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 10 a ? 20 ? 25 gate-threshold voltage v gs(th) v ds = v gs , i d = ? 0.25 ma ? 1.3 ? 2.1 ? 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = ? 16 v, v gs = 0 v ? 1 zero gate voltage drain current i dss t j = 55 c ? 10 a on-state drain current b i d(on) v ds = ? 10 v, v gs = ? 10 v ? 0.5 ? 0.75 a v gs = ? 4.5 v, i d = ? 0.05 a 1.7 3.5 drain-source on-resistance b r ds(on) v gs = ? 10 v, i d = ? 0.2 a 0.9 1.4 forward transconductance b g fs v ds = ? 10 v, i d = ? 0.2 a 250 600 ms diode forward voltage v sd i s = ? 0.25 a, v gs = 0 v ? 0.9 ? 1.5 v dynamic total gate charge q g 2700 gate-source charge q gs v ds ? 16 v, v gs = ? 10 v, i d ? 200 ma 500 pc gate-drain charge q gd 600 input capacitance c iss 55 output capacitance c oss v ds = ? 15 v, v gs = 0 v, f = 1 mhz 50 pf reverse transfer capacitance c rss 18 switching c t d(on) 8 12 turn-on time t r v dd = ? 15 v, r l = 75 20 30 t d(off) i d ? 0.2 a, v gen = ? 10 v r g = 6 20 35 ns turn-off time t f 30 40 notes a. for design aid only, not subject to production testing. vpbp02 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
tp0202t vishay siliconix document number: 70208 s-04279 ? rev. g, 16-jul-01 www.vishay.com 11-3 output characteristics transfer characteristics capacitance gate charge on-resistance vs. gate-source voltage on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) 0 20 40 60 80 100 120 140 160 180 0 1000 2000 3000 4000 5000 6000 0 1 2 3 4 5 0 1 2 3 4 5 25 c t a = ? 55 c c rss c oss c iss v gs = ? 4.5 v 125 c i d = ? 200 ma ? 3 v ? 4 v ? 5 v v gs = ? 10 thru ? 6 v i d = ? 200 ma i d = ? 50 ma v ds = ? 16 v v ds = ? 10 v i d ? drain current (a) i d ? drain current (a) r ds(on) ? on-resistance ( ? ) r ds(on) ? on-resistance ( ? ) c ? capacitance (pf) v gs ? gate-to-source voltage (v) v gs = ? 10 v v gs = ? 0 v f = 1 mhz ? 20 ? 15 ? 10 ? 5 0 ? 0.1 ? 0.2 ? 0.3 ? 0.4 ? 0.5 0.0 ? 1.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 0.0 0.0 ? 1.5 ? 3.0 ? 4.5 ? 6.0 ? 0.8 ? 0.6 ? 0.4 ? 0.2 0.0 0 ? 1 ? 2 ? 3 ? 4 0 ? 4 ? 8 ? 12 ? 16 ? 20 0 ? 4 ? 8 ? 12 ? 16 ? 20
tp0202t vishay siliconix www.vishay.com 11-4 document number: 70208 s-04279 ? rev. g, 16-jul-01 on-resistance vs. junction temperature source-drain diode forward voltage threshold voltage variance over temperature v sd ? source-to-drain voltage (v) t j ? junction temperature ( c) t j ? junction temperature ( c) ? 0.50 ? 0.25 0.00 0.25 0.50 ? 50 ? 25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 ? 50 ? 25 0 25 50 75 100 125 150 v gs = ? 4.5 v i d = ? 50 ma v gs = ? 10 v i d = ? 200 ma i d = ? 250 a t a = 150 c t a = 25 c i s ? source current (a) v gs(th) ? variance (v) ? 10.000 ? 1.000 ? 0.100 ? 0.010 ? 0.001 0 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 2.0 ? 2.4 ? 2.8 r ds(on) ? on-resistance ( ) (normalized)
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